The numerical solutions of binary-phase (0, π) gratings for one-dimensional array illuminators up to 32 are presented. Some fabrication errors, which are due to position-quantization errors, phase errors, dilation (or erosion) errors, and the side-slope error, are calculated and show that even-number array illuminators are superior to odd-number array illuminators when these fabrication errors are considered. One (0, π) binary-phase, 8 × 16 array illuminator made with the wet-chemical-etching method is given in this paper.

We described a highly efficient polarizing beam splitter (PBS) of a deep-etched binary-phase fused-silica grating, where TE- and TM-polarized waves are mainly diffracted in the -1st and 0th orders, respectively. To achieve a high extinction ratio and diffraction efficiency, the grating depth and period are optimized by using rigorous coupled-wave analysis, which can be well explained based on the modal method with effective indices of the modes for TE/TM polarization. Holographic recording technology and inductively coupled plasma etching are employed to fabricate the fused-silica PBS grating. Experimental results of diffraction efficiencies approaching 80% for a TE-polarized wave in the -1st order and more than 85% for a TM-polarized wave in the 0th order were obtained at a wavelength of 1550 nm. Because of its compact structure and simple fabrication process, which is suitable for mass reproduction, a deep-etched fused-silica grating as a PBS should be a useful device for practical applications.

Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.