Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures J. Appl. Phys. 110, 113713 (2011) Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation J. Appl. Phys. 110, 104903 (2011) Diameter reduction of nanowire tunnel heterojunctions using in situ annealing Appl. Phys. Lett. 99, 203101 (2011) Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy J. Appl. Phys. 110, 093718 (2011) Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

In this study, the interface adhesion and mechanical strength of wafer bonded GaAs/GaAs and GaAs/InP semiconductors, each of (100) face, were characterized by combining the measurements of interface fracture energy γo and lap shear strength Es. The relations between the interface adhesion and annealing processes for four different types of bonding configurations, i.e., antiphase bonding, in-phase bonding, and twist bonding with 5° and 30° misalignments, were systematically studied. The surface free energy γα-GaAs/oxide (0.11–0.28 J/m2) of amorphous α-GaAs/oxide mixture was estimated based upon the reported surface free energy γc-GaAs (0.63 J/m2) of crystalline [100] GaAs and measured overall interface fracture energy γtotal (0.525 J/m2) of GaAs/GaAs bonded wafers. The micromorphologies of the bonded and debonded wafer interfaces were characterized by atomic force microscopy (AFM) and transmission electron microcopy (TEM). The interface microfailure mechanism of directly bonded GaAs wafers was proposed based on AFM and TEM microstructural analysis.

Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector J. Appl. Phys. 94, 5283 (2003); 10.1063/1.1609634Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxyWe studied the quantum wire photodetector ͑QRIP͒ structures with an InGaAs quantum wires ͑QWRs͒ active region formed by the strain-induced lateral ordering ͑SILO͒ process. The InGaAs multiple layer QWR structure maintains a small total strain due to the strain-balanced nature of the SILO process. The effects of growth temperature and layer structures on the QWR formation are studied using photoluminescence and transmission electron microscope measurements. High-resolution x-ray diffraction studies on QRIP structures consisting of 20 QWR layers confirmed the strain-balanced property of SILO-based structures.

Bulk GaAsSb samples were grown lattice matched to InP substrates at different temperatures using gas-source molecular-beam epitaxy in order to optimize the crystal quality. Growth temperatures from 15°C above the InP surface oxide desorption temperature to 145°C below it have been investigated. Undesirable properties such as Sb composition variation and natural composition superlattices in the growth direction have occurred at high growth temperature possibly due to phase separation. High quality, single phase GaAsSb lattice matched to InP has been grown at 135°C below the desorption temperature as evidenced by narrow linewidths and clear Pendellösung fringes displayed in high-resolution x-ray diffraction spectra.

Articles you may be interested inGrowth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP