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The introduction of low-k & ultra-low-k dielectrics, lead-free (Pb-free) solder interconnects or C4's, and organic flip-chip laminates for integrated circuits have led to some major reliability challenges for the semiconductor industry. These include C4 electromigration (EM) and mechanical failures induced with-in the Si chip due to chip-package interactions (CPI). In 32nm technology, certain novel design changes were evaluated in the last Cu wiring level and the Far Back End of Line levels (FBEOL) to strategically re-distribute the current more uniformly through the Pb-free C4 bumps and therefore improve the C4 EM capabilities of the technology. FBEOL process integration changes, such as increasing the thickness of the hard dielectric (SiNx & SiOx) and reducing the final via diameter, were also evaluated for reducing the mechanical stresses in the weaker BEOL levels and mitigating potential risks for mechanical failures within the Si chip. The supporting white-bump, C4 EM and electrical/mechanical modeling data that demonstrates the benefits of the design and integration changes will be discussed in detail in the paper. Some of the key processing and integration challenges observed due to the design and process updates and the corresponding mitigation steps taken will also be discussed.

In organic packages, large die and large laminate body sizes are susceptible to CTE (coefficient of thermal expansion) mismatch driven warpage, stresses and strains, which can result in C4 white bumps, micro Ball Grid Array (BGA) interconnection issues, and package thermal reliability concerns. Low CTE carriers minimize these concerns and allow increased chip join yields and improved package reliability. Modeling and characterization of warpage, chip and micro BGA integrity and electrical characterization of a low CTE, Chip Scale Package (CSP) were described in an earlier paper. In this paper we report the progress on the next phase - thermal and chip package interaction (CPI) evaluation of a single chip CSP designed for use with Multi-Chip Modules (MCM). Assembly, characterization, thermal performance and reliability stress results of these low CTE CSP Single Chip Modules (SCMs) are described. Measured warpage values are compared with thermo-mechanical modeling results. Demonstration of a dual CSP design and assembly with large dies is also presented. The successful demonstration of the material set, bond and assembly processes, and reliability of a large die, high I/O CSP, followed by the demonstration of a dual CSP on a multi component carrier, are fore-runners to the development of multi-CSP MCMs.