A silicon nitride film is one of the most important factors for determining the trapping efficiency of nonvolatile silicon-oxidenitride-oxide-silicon (SONOS) memory devices. In this work, we focus on the nitride-layer deposition at different temperatures by low-pressure chemical vapor deposition (LPCVD) and examine the trap levels through photoluminescence (PL) measurement. Moreover, using DC current-voltage (I-V) and capacitance-voltage (C-V) measurements, we investigate the electrical characteristics, breakdown characteristics, and the relationship between performance and trap-level depth. Our results show that the silicon nitride deposited by LPCVD at 830 C has better performance and reliability. However, the charge-to-breakdown (Q BD ) quality of the nitride film deposited at 600 C is better due to the suppression of the influence of the transition layer near the interface at the lower deposition temperature. In summary, this study can help researchers to understand the temperature effect on nitride-film deposition and the analysis of its electrical characteristics.

Temperature resulting from the joule heating power and the turn-on and turn-off dissipation of high-power, high-frequency applications is the root cause of their thermal instability, electrical performance degradation, and even thermal-fatigue failure. Thus, the study presents thermal and electrical characterizations of the power MOSFET module packaged in SOT-227 under natural convection and forced convection through three-dimensional (3D) thermal-electric (TE) coupled field analysis. In addition, the influences of some key parameters like electric loads, ambient conditions, thermal management considerations (heat sink, heat spreader) and operation conditions (duty cycle and switching frequency) on the power loss and thermal performance of the power module are addressed. The study starts from a suitable estimation of the power losses, where the conduction losses are calculated using the temperature- and gate-voltage-dependent on-state resistance and drain current through the device, and the switching losses are predicted based on the ideal switching waveforms of the power MOSFETs applied. The effectiveness of the theoretical predictions in terms of device’s power losses and temperatures is demonstrated through comparison with the results of circuit simulation and thermal experiment.

Resistive random access memory (ReRAM) devices are considered to be one of the most promising candidates for the next generation of nonvolatile memory devices because of their superior properties such as low power consumption, simple structure, high integration density, and fast operation speed. In this study, we used zinc oxide (ZnO) thin films to fabricate ReRAM devices comprising Au/ZnO/Al and Al/Au/ZnO/Al structures. We observed that the operating stability of the device containing the Al/Au/ZnO/Al structure improved. The devices displayed effective and stable operational characteristics. The operational voltage of the ZnO ReRAM devices was less than 3 V, and the reset operational voltage was less than −1.5 V.

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