The unique degradability and excellent biocompatibility make silk fibroin an attractive material for flexible transient memristors. Materials functionalization from the mesoscopic reconstruction view is a promising route to expand functions and create new types of electronic devices. Here, the transformation of the abrupt-to-progressive switching behavior in fibroin-based memristors is achieved via annealing to adjust the mesoscopic structure. Through electrical test and scanning electron microscope analysis, we study the electrochemical dynamics of metal nanoparticles in switching medium with different mesoscopic structures and directly reveal the microscopic origin of the abrupt-to-progressive transformation in fibroin-based transient memristors. The device exhibits abrupt resistive switching behaviors when the mobility and redox rate are high and displays progressive resistive switching behaviors under the low mobility and low redox rate condition. These findings reveal the microscopic origins of abrupt-to-progressive conversion and provide general guidance for designing high-performance memory devices and artificial synapses.

We studied the electronic and magnetic properties of Cl and transition metal co-doped phosphorene. Different species and doping sites gave various characteristics. Biaxial strain was used to adjust the impurity states for V–Cl and Co–Cl co-doping.

We demonstrate different structures of high-order topological insulators supporting topologically protected biphoton states and theoretically explained that the photon pairs generated from the four-wave mixing (FWM) process are continuous frequency entangled.

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We propose a method of tuning the repetition rate of soliton microcombs by temperature. The tunable range reaches 12 MHz. The trade-off between acquisition rate and precision of ranging systems is overcome without additional barrier.