This study demonstrates a new 7T2R nonvolatile SRAM (nvSRAM) with 3D ReRAM stacked structure for normally-off computing application. With this structure, the fully performance of SRAM can work well in active mode, and reduce the leakage current in power-off mode. High performance HfOx based ReRAM is used for high speed storage element and exhibits an instant-on characteristic. The present 7T2R nvSRAM cell includes a 1T2R RRAM (1 transistor/2 resistive memory) cell and a 6T SRAM circuit, which is low area penalty and achieve the nvSRAM function. The write margin is improved over 1.03x and 1.37x larger than that of 6T SRAM and 6T2R nvSRAM. The access time and read/write power consumption in 7T2R nvSRAM is better than that of 8T2R structure. Finally, a 16 Kb macro was fabricated with a 0.18 μm TSMC FEOL and ITRI BEOL. According to the measurement result, the VDD min can be low down to 0.7 V and access time can be fast as 8.3 ns without pad delay. The data storage time is only 10 ns for SET and RESET in the ReRAM cell.

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An active thermal compensation system for a low temperature-bias-drift (TBD) MEMS-based gyroscope is proposed in this study. First, a micro-gyroscope is fabricated by a high-aspect-ratio silicon-on-glass (SOG) process and vacuum packaged by glass frit bonding. Moreover, a drive/readout ASIC, implemented by the 0.25 μm 1P5M standard CMOS process, is designed and integrated with the gyroscope by directly wire bonding. Then, since the temperature effect is one of the critical issues in the high performance gyroscope applications, the temperature-dependent characteristics of the micro-gyroscope are discussed. Furthermore, to compensate the TBD of the micro-gyroscope, a thermal compensation system is proposed and integrated in the aforementioned ASIC to actively tune the parameters in the digital trimming mechanism, which is designed in the readout ASIC. Finally, some experimental results demonstrate that the TBD of the micro-gyroscope can be compensated effectively by the proposed compensation system.

High-voltage light-emitting diodes (HV LEDs) possess higher cut-in voltages and works at a high supply voltage. As the specific feature, they can be directly driven via universal utility-line voltages after appropriate rectification. This significantly simplifies the circuit structure and reduces the manufacturing cost. While HV LEDs are driven directly by half-wave rectified DC power source, which is an impure form of DC, their lumen is easily affected by changing the AC voltage source, while only constant current control is insufficient for stable lumen, thus hindering their usefulness in practical applications. This study proposes a simple, however effective, HV LED driver via a proportional and integral current control accompanied with feedforward compensation which is capable of maintaining stable lumen under changing AC voltage sources. Experimental results have demonstrated satisfactory performance in lighting.