In this study, the barium fluotitanate powder prepared by the precipitate of hexafluorotitanic acid and barium nitrate solution was used as the precursor for the deposition of barium titanate film on silicon substrate. The boric acid was incorporated into the deposition solution to enhance the deposition rate. A mirrorlike film can be obtained. The chemical reaction of liquid-phase deposited barium titanate is proposed. The leakage current density is as low as 5 × 10 -9 A/cm 2 . The dielectric constant and the refractive index of the deposited film are 60 and 1.96, respectively.

Niobium-doped amorphous titanium oxide film can be deposited on a Corning glass substrate using a mixture of ammonium hexafluorotitanate, boric acid, niobium oxide and ammonium hydrogen fluoride aqueous solutions. After thermal annealing, the nanocrystallite niobium-doped titanium oxide film can be obtained. The smaller crystallite size of nanocrystallite niobium-doped titanium oxide than that of undoped-titanium oxide benefits the catalytic activity for sensing gas. A thin-film niobium-doped titanium oxide oxygen sensor with a higher sensitivity and a faster response is demonstrated.

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Fluorinated silicon dioxide films were prepared by liquid phase deposition method using hydrosilicofluoric acid and ammonium hydroxide aqua as sources. The quality of fluorinated silicon dioxide films can be improved by N2 thermal annealing. It is in an attempt to evaluate the feasibility of this material as a candidate for inter-metal dielectrics in ULSIs. The obtained results were the relative dielectric constant of 3.2, and the leakage current density measured at the electric field of 1.5 MV/cm about 1×10-7 A/cm2 at the annealing temperature of 350°C. It has potential for inter-metal dielectric applications.

In this study we investigate the properties of nitrogen-doped fluorinated silicon oxide films deposited on silicon using hydrosilicofluoric acid and ammonium hydroxide aqua as sources by the temperature-differencebased liquid-phase deposition method. The deposition rate increases with the concentration of ammonium hydroxide aqua and the deposition temperature. Fluorine and nitrogen atomic concentrations increase with the concentration of ammonium hydroxide aqua. In the study, the F atomic concentration of the deposited films can range from 5.1% to 9.8%. The dielectric constant of the film is a function of the concentration of ammonium hydroxide aqua and the deposition temperature. At a deposition temperature of 40 °C, the dielectric constant can drop to 3.06 with 0.5 M NH 4 OH incorporation. It is suitable for intermetal dielectric application. The films also exhibit good passivation to moisture.