In this study we investigate the properties of nitrogen-doped fluorinated silicon oxide films deposited on silicon using hydrosilicofluoric acid and ammonium hydroxide aqua as sources by the temperature-differencebased liquid-phase deposition method. The deposition rate increases with the concentration of ammonium hydroxide aqua and the deposition temperature. Fluorine and nitrogen atomic concentrations increase with the concentration of ammonium hydroxide aqua. In the study, the F atomic concentration of the deposited films can range from 5.1% to 9.8%. The dielectric constant of the film is a function of the concentration of ammonium hydroxide aqua and the deposition temperature. At a deposition temperature of 40 °C, the dielectric constant can drop to 3.06 with 0.5 M NH 4 OH incorporation. It is suitable for intermetal dielectric application. The films also exhibit good passivation to moisture.

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This study investigates the properties of fluorinated silicon dioxide films using hydrosilicofluoric acid and ammonium hydroxide aqua as sources by the temperature-difference-based liquid-phase deposition method. According to the experimental results, the deposition rate and refractive index increase with the concentration of ammonium hydroxide aqua. The secondary ion mass spectrometry depth profile shows that the fluorine concentration is high and uniform throughout the deposited film. The nitrogen is accumulated at the interface. The flatband voltage and leakage current density are functions of the concentration of ammonium hydroxide aqua.