Co-axial electrospinning
was applied for the structuring of non-woven
webs of TiO
2
nanofibers loaded with Ag, Au, and CuO nanoparticles.
The composite layers were tested in an electrochromic half-cell assembly.
A clear correlation between the nanoparticle composition and electrochromic
effect in the nanofibrous composite is observed: TiO
2
loaded
with Ag reveals a black-brown color, Au shows a dark-blue color, and
CuO shows a dark-green color. For electrochromic applications, the
Au/TiO
2
layer is the most promising choice, with a color
modulation time of 6 s, transmittance modulation of 40%, coloration
efficiency of 20 cm
2
/C, areal capacitance of 300 F/cm
2
, and cyclic stability of over 1000 cycles in an 18 h period.
In this study, an unexplored path for the rational design of TiO
2
-based electrochromic device is offered with unique color-switching
and optical efficiency gained by the fibrous layer. It is also foreseen
that co-axial electrospinning can be an alternative nanofabrication
technique for smart colored windows.
High-density arrays of silicon wedges bound by {111}
planes on
silicon (100) wafers have been created by combining convex corner
lithography on a silicon dioxide hard mask with anisotropic, crystallographic
etching in a repetitive, self-aligned multiplication procedure. A
mean pitch of around 30 nm has been achieved, based on an initial
pitch of ∼120 nm obtained through displacement Talbot lithography.
The typical resolution of the convex corner lithography was reduced
to the sub-10 nm range by employing an 8 nm silicon dioxide mask layer
(measured on the {111} planes). Nanogaps of 6 nm and freestanding
silicon dioxide flaps as thin as 1–2 nm can be obtained when
etching the silicon at the exposed apices of the wedges. To enable
the repetitive procedure, it was necessary to protect the concave
corners between the wedges through “concave” corner
lithography. The produced high-density arrays of wedges offer a promising
template for the fabrication of large arrays of nanodevices in various
domains with relevant details in the sub-10 nm range.
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