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We report on the preparation and performance enhancement of n-type low-voltage organic field effect transistors (FETs) based on cross-linked poly(vinyl alcohol) (cr-PVA) as gate dielectric and C 60 fullerene as channel semiconductor. Transistors were prepared using bottom-gate top-contact geometry and exhibited field-effect mobility (μ FET ) of 0.18 cm 2 V -1 s -1 . Treatment of the gate dielectric surface with an anionic surfactant, sodium dodecyl sulfate (SDS), passivates the positively charged defects present on the surface of cr-PVA, hence resulting in overall transistor performance improvement with an increase in μ FET to 1.05 cm 2 V -1 s -1 and additional significant improvements in dielectric capacitance, transistor on/off current ratio and transconductance.