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Acoustoelectric effect (AE) in a non-degenerate fluorinated single walled carbon nanotube (FSWCNT) semiconductor was carried out using a tractable analytical approach in the hypersound regime 1 q  , where q is the acoustic wavenumber and  is the electron mean-free path. In the presence of an external electric field, a strong nonlinear dependence of the normalized AE current density AE z o

We show that Hall-like current can be induced by acoustic phonons in a nondegenerate, semiconductor fluorine-doped single-walled carbon nanotube (FSWCNT) using a tractable analytical approach in the hypersound regime 1 q  (q is the modulus of the acoustic wavevector and  is the electron mean free path). We observed a strong dependence of the Hall-like current on the magnetic field, H, the acoustic wave frequency, q ω , the temperature, T, the overlapping integral, ∆ , and the acoustic wavenumber, q. Qualitatively, the Hall-like current exists even if the relaxation time τ does not depend on the carrier energy but has a strong spatial dispersion, and gives different results compared to that obtained in bulk semiconductors. For

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