Design of a beamline for soft and deep lithography on third generation synchrotron radiation source Rev. Sci. Instrum. 70, 1605 (1999); 10.1063/1.1149640Reuse of AIP Publishing content is subject to the terms at: https://publishing.aip.org/authors/rights-and-permissions. We report the main characteristics of the advanced photoelectric effect experiments beamline, operational at Elettra storage ring, featuring a fully independent double branch scheme obtained by the use of chicane undulators and able to keep polarization control in both linear and circular mode. The paper describes the novel technical solutions adopted, namely, ͑a͒ the design of a quasiperiodic undulator resulting in optimized suppression of higher harmonics over a large photon energy range ͑10-100 eV͒, ͑b͒ the thermal stability of optics under high heat load via cryocoolers, and ͑c͒ the end station interconnected setup allowing full access to off-beam and on-beam facilities and, at the same time, the integration of users' specialized sample growth chambers or modules.

Complete photoemission experiments, enabling measurement of the full quantum set of the photoelectron final state, are in high demand for studying materials and nanostructures whose properties are determined by strong electron and spin correlations. Here the implementation of the new spin polarimeter VESPA (Very Efficient Spin Polarization Analysis) at the APE-NFFA beamline at Elettra is reported, which is based on the exchange coupling between the photoelectron spin and a ferromagnetic surface in a reflectometry setup. The system was designed to be integrated with a dedicated ScientaOmicron DA30 electron energy analyzer allowing for two simultaneous reflectometry measurements, along perpendicular axes, that, after magnetization switching of the two targets, allow the three-dimensional vectorial reconstruction of the spin polarization to be performed while operating the DA30 in highresolution mode. VESPA represents the very first installation for spin-resolved ARPES (SPARPES) at the Elettra synchrotron in Trieste, and is being heavily exploited by SPARPES users since autumn 2015.

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Here we present an integrated ultra-high vacuum apparatus -named MBE-Cluster -dedicated to the growth and in situ structural, spectroscopic and magnetic characterization of complex materials. Molecular Beam Epitaxy (MBE) growth of metal oxides, e.g. manganites, and deposition of patterned metallic layers can be fabricated and in situ characterized by reflection high-energy electron diffraction (RHEED), low-energy electron diffraction (LEED) -Auger Electron Spectroscopy, X-ray photoemission spectroscopy (PES) and azimuthal longitudinal magneto-optic Kerr effect (MOKE). The temperature can be controlled in the range from 5 to 580 K, with the possibility of application of magnetic fields H up to ±7 kOe and electric fields E for voltages up to ±500 V. The MBE-Cluster operates for in-house research as well as user facility in combination with the APE beamlines at Sincrotrone-Trieste and the high harmonic generator (HHG) facility for timeresolved spectroscopy. I. INTRODUCTIONMolecular beam epitaxy (MBE) in ultra-high-vacuum (UHV) provides unique flexibility and control properties for growing complex metal oxides. 1,2 The quasi-equilibrium deposition conditions during the growth allow maximum control of thickness and surface termination of single crystal epitaxial films, making it the method of choice when the low-energy properties of the grown heterostructures need to be investigated, such as charge transfer at the interface or the effects of controlled strain. 3-5 More generally, magnetism,

Here, we present an integrated ultra-high-vacuum (UHV) apparatus for the growth of complex materials and heterostructures. The specific growth technique is the Pulsed Laser Deposition (PLD) by means of a dual-laser source based on an excimer KrF ultraviolet and solid-state Nd:YAG infra-red lasers. By taking advantage of the two laser sources—both lasers can be independently used within the deposition chambers—a large number of different materials—ranging from oxides to metals, to selenides, and others—can be successfully grown in the form of thin films and heterostructures. All of the samples can be in situ transferred between the deposition chambers and the analysis chambers by using vessels and holders’ manipulators. The apparatus also offers the possibility to transfer samples to remote instrumentation under UHV conditions by means of commercially available UHV-suitcases. The dual-PLD operates for in-house research as well as user facility in combination with the Advanced Photo-electric Effect beamline at the Elettra synchrotron radiation facility in Trieste and allows synchrotron-based photo-emission as well as x-ray absorption experiments on pristine films and heterostructures.