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A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si CbaMek. MotivationCarrier transport enhancement induced by strain has led to much interest in using strained Si to improve current drive in Si MOSFETs.

Double-gate FinFET devices with asymmetric and symmetric poly-silicon gates have been fabricated. Symmetric gate devices show drain currents competitive with fully optimized bulk silicon technologies. Asymmetric-gate devices show IV,I-O.lV, with off-currents less than 100nA/um at Vgs= 0.

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