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We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled devices with physical gate lengths down to 6nm and SO1 channels as thin as 4nm are presented. For the frst time, we report ring oscillators with 26nm gate lengths and ultra-thm Si channels.10.6.2 268-IEDM

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Double-gate FinFET devices with asymmetric and symmetric poly-silicon gates have been fabricated. Symmetric gate devices show drain currents competitive with fully optimized bulk silicon technologies. Asymmetric-gate devices show IV,I-O.lV, with off-currents less than 100nA/um at Vgs= 0.

No abstract