We report an analysis of the absorption edge anisotropy in CuGeO3 based on a comparison
of polarized optical data with electronic structure calculations in the framework of the
extended Hückel tight binding model. Taking the z axis as parallel to the CuO4 chains, we
ascribe the absorption edge in the magnetic chain direction to O 2p
x
, 2p
y
→ singly filled Cu
3d transitions and the edge in the transverse direction to O 2p
z
→ singly filled Cu 3d
excitations. The dual slope in the transverse direction is a direct consequence of the double
maximum in the O 2p
z
density of states. The influence of Zn and Si doping on the electronic
spectra of CuGeO3 is analyzed as well. Whereas neither impurity affects the phonon-assisted
d−d band, Si doping smears the charge-transfer gap. This smearing of the gap by interchain
impurity substitution is attributed to random distortions of the crystalline lattice giving
rise to structurally induced changes in the electronic properties.
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