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Data are presented on the modal and lasing characteristics of a new type of vertical-cavity surface-emitting laser that uses an intracavity mesa to confine the optical mode, with the mesa also confining the quantum dot active region. The quantum dot active region is lithographically isolated within the intracavity mesa using etching and epitaxial regrowth to form an all-epitaxial microcavity light source. Cavity quality factors as high as 33 000 are measured, and ground state lasing is demonstrated with a single quantum dot active layer for temperatures up to ∼110K.

Data are presented on a new type of microcavity that uses epitaxial overgrowth to localize self-organized quantum dots in a microcavity optical mode. The all-epitaxial design eliminates free surfaces from the active material, eliminates quantum dots from the mirror and passive cavity regions, and provides a mechanically robust design with high thermal conductivity. The epitaxial overgrowth leads to a new type of lens-shaped microcavity, while the mesa confinement leads to lithographically defined placement of the quantum dots near the center of the optical mode.

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