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In this work, different methods employed for the analysis of emission spectra are presented. The proposal is to calculate the excitation temperature (Texc), electronic temperature (Te) and electron density (ne) for several plasma techniques used in the growth of thin films. Some of these tecnniques include magnetron sputtering and arc discharges. Initially, some fundamental physical principles that support the Optical Emission Spec-troscopy (OES) technique are described; then, some rules to consider during the spectral analysis to avoid ambiguities are listed. Finally, some of the more frequently used spectroscopic methods for determining the physical properties of plasma are described.

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