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The novel characteristics of a new lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) are explored using two-dimensional (2-D) simulation. The collector-base junction of the proposed lateral PNM transistor consists of a Schottky junction between n-base (N) and metal (M). The characteristics of this structure are compared with that of lateral PNP transistors on SOI. We demonstrate that the proposed structure has a superior performance in terms of reduced collector resistance, high current gain, negligible base widening, and very low reverse recovery time compared to the compatible lateral PNP transistors. A simple fabrication procedure is also suggested providing the incentive for experimental verification.

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