TiSi2, CoSi2, and NiSi self-aligned silicide processes have been studied, compared, and applied to thin-film siliconon-insulator technology. Compared to TiSi5, CoSi2 and NiSi have the advantages of wider process temperature window, no significant doping retarded reaction, narrow runner degradation, and thin-film degradation. Therefore, they are more suitable for thin-film silicon-on-insulator technology. N-type field effect transistors have been fabricated in a complementary metal oxide-semiconductor compatible thin-film silicon-on-insulator technology with titanium, cobalt, and nickel self-aligned silicide processes for low-voltage, low-power microwave applications. The initial thicknesses of titanium, cobalt, and nickel are 30, 13, and 25 nm, respectively. The gate sheet resistances are 6.2, 4.4, and 2.9 fl/Q, respectively, and the total source/drain series resistances are 700, 290, and 550 Cl m, respectively. High-frequency measurement results are also presented. InfroductionThin-film silicon-on-insulator, metal oxide-semiconductor field-effect transistors (TFSOI MOSFETS) are now considered good candidates for high-speed, low-voltage, low-power applications because of their quasi-ideal properties, such as high current drivability, low body effect, and low parasitic capacitances.1 It has been reported that SOl MOSFETs fabricated on high-resistivity substrates separated by implanted oxgyen (SIMOX) wafers, with a nonstandard complementary metal oxide-semiconductor (CMOS) process using metal gate and air-bridge metallization, offer interesting microwave performance.2Recently, it has been demonstrated that a 0.75 sm fully depleted TFSOI n-MOSFET fabricated with a CMOScompatible process, with a 30 nm thick TiSi5 layer on both gate and source/drain areas, presents a maximum oscillation frequency of 11 GHz for a supply voltage of 0.9 V. This kind of device is suitable for low-voltage, low-power telecommunication applications.The TiSi7 self-aligned silicide (SALICIDE) process is widely used in bulk CMOS technology to reduce series resistance and gate sheet resistance.4'5 It has been reported that the TiSi5 process encounters a lot of problems in scaled devices. Indeed, the titanium silicidation reaction is not only sensitive to the doping concentration in silicon substrate, but it is also sensitive to silicide film thickness.6'7 Until now, it is still difficult to apply a TiSi5 SALI-CIDE process to TFSOI technology, mainly because of the limited thickness of the active silicon layer.6'9 A very narrow process temperature window is observed in our experiments to use a TiSi5 process on TFSOI MOSFETs.1°F urthermore, the series resistance of an SOl MOSFET with a SALICIDE process is also sensitive to silicide thickness, the optimized condition is to keep the silicide layer thickness less than 80% of the original active silicon layer thickness.1' Therefore, for a TFSOI MOSFET with an 80 nm thick active silicon layer, the thickness of silicide should be thinner than 64 nm to secure a low contact resistance.Recently, it has bee...

We report on the microwave properties of arrays of parallel magnetic nanowires constituted of nickel, cobalt, or Ni/Fe alloy embedded in nanoporous track-etched polymer membranes. The experiments consist of transmission measurements carried out on microwave stripline structures using a magnetically loaded membrane as the substrate. Measurements were performed at frequencies ranging from 100 MHz to 40 GHz and under static magnetic fields up to 5.6 kOe applied along the wires axis. Resonance phenomena have been observed in the magnitude of the complex transmission coefficient at frequencies which depend on the nature of the material and applied static magnetic field. Results are consistent with those expected for a ferromagnetic resonance (FMR) experiment and the observed behaviors are analyzed in the framework of the classical FMR theory.

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