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Thermal behavior and stability of roomtemperature continuous Al x Ga1−x AsGaAs quantum well heterostructure lasers grown on Si

We describe the construction and room-temperature (300 K) continuous (cw) operation of p-n diode AlxGa1−xAs-GaAs quantum well heterostructure (QWH) lasers grown on Si substrates. The QWH crystal is grown in two stages, the first part by molecular beam epitaxy (MBE) and the single-well quantum well active region by metalorganic chemical vapor deposition (MOCVD). Simple gain-guided stripe configuration lasers fabricated on the MBE MOCVD QWH wafer operate cw at 300 K and have pulsed thresholds as low as 1.8×103 A/cm2.

A 20-element linear array of single transverse mode semiconductor lasers is operated in an external Talbot cavity. A total cw output power of 250 mW in a diffraction-limited far field and 29% differential efficiency is obtained with a 50% output coupler. By decreasing the output mirror reflectivity to 20%, 900 mW cw in a 1.7 times diffraction-limited radiation pattern with an increased differential efficiency of 38% is obtained. The low fill factor of the array (1:12) acts as a spatial mode-selective filter resulting in strong mode discrimination.