Stoichiometric and nonstoichiometric polyelectrolyte complex (PEC) was prepared with polyethylene glycol-monosuccinate (PEGMS), and chitosan (CS). A series of PEGMS were synthesized by a 1 : 1 mol ratio between PEG and succinic anhydride. Then, the novel PEC was prepared by a various mole reaction of the above synthesized PEGMS and CS. The physicochemical properties of the synthesized PEC was characterized by using elemental analysis, FTIR, 1 H, and 13 C nuclear magnetic resonance, dissolution behavior, and phase transition phenomenon. Furthermore, some properties of the PEC obtained were analyzed by UV-Visible spectrometry, wide-angle X-ray diffraction, differential scanning calorimeter, scanning electron microscope, and estimated solubility, and cell viability assay, respectively. It was found that the observed FTIR, 1 H, and 13 C-NMR data was in good agreement with the chemical structure of the prepared PEGMS and PEC. The dissolution behaviors of nonstoichiometric PEC were found to depend on the pH of the solution as well as on the PEGMS/CS composition. The study of MTT assay suggested that the viability of HepG2 human hepatoblastoma cell on PEC were increased significantly in accordance with mole ratio of CS. As the results, the obtained several product is a useful intermediate, which permits further chemical modification for the amino group of CS and may have potential applications in biocompatible or cosmetic systems.

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There is debate in the field of oncolytic virus (OV) therapy, whether a single viral dose, or multiple administrations, is better for tumor control. Using intravital microscopy, we describe the fate of vesicular stomatitis virus (VSV) delivered systemically as a first or a second dose. Following primary administration, VSV binds to the endothelium, initiates tumor infection and activates a proinflammatory response. This initial OV dose induces neutrophil migration into the tumor and limits viral replication. OV administered as a second dose fails to infect the tumor and is captured by intravascular monocytes. Despite a lack of direct infection, this second viral dose, in a monocyte-dependent fashion, enhances and sustains infection by the first viral dose, promotes CD8 T cell recruitment, delays tumor growth and improves survival in multi-dosing OV therapy. Thus, repeated VSV dosing engages monocytes to post-condition the tumor microenvironment for improved infection and anticancer T cell responses. Understanding the complex interactions between the subsequent viral doses is crucial for improving the efficiency of OV therapy and virus-based vaccines.

As microelectronic feature sizes are scaled down, the characteristics and distribution of DRAM data retention time and write recovery time are getting worse. This degradation is due to the increases in the leakage current and resistance of the cell node and the decrease of cell capacitance in DRAM devices. As the physical distance between storage nodes decreases, node potential is increasingly affected by small potential changes in adjacent storage nodes. In this paper, we will show that the one of the most dominant contributors to failure is the adjacent storage node level, and we will demonstrate how node level affects write time delay. The effect of the adjacent storage node level can be correlated with a change in threshold voltage, much like the MOSFET body effect. We define this phenomenon as the lateral body effect, and propose a model for adjacent potential effect using the Buried Cell Array Transistor (BCAT) structure in sub 20nm DRAM.

Reduced noise immunity due to dimensional shrinkage, lower operational voltages and increasing densities results in increased soft or random failures. In practice, noises are generated by complex operation of device. In Dynamic Random Access Memory (DRAM), failures by noise are regarded as either decrease in charge at cell capacitor or increase in systematic interferences. Simple equivalent circuit of One Transistor One Capacitor (1T1C) DRAM and theoretical approach in time-domain are provided for quantitative noise analysis related to sense amplifier circuitries. Results show that local voltage fluctuation reduces sensing margin to judge data-0 or data-1. This phenomenon is easily observed at 1T1C with high resistance because response of voltage generator is comparatively slow.