Articles you may be interested inDevelopment of plasma etching processes to pattern sub-15 nm features with PS-b-PMMA block copolymer masks: Application to advanced CMOS technology J. Vac. Sci. Technol. B 32, 051806 (2014); 10.1116/1.4895334Formation of three-dimensional and nanowall structures on silicon using a hydrogen-assisted high aspect ratio etching J.Plasma enhanced chemical vapor deposition Si-rich silicon oxynitride films for advanced self-aligned contact oxide etching in sub-0.25 μm ultralarge scale integration technology and beyond

No abstract

A number of current and future optoelectronic components require the creation of waveguides in LiNbO3. In order to accomplish this, trenches between one and ten microns deep must be patterned into the LiNbO3 substrate. We have demonstrated the formation of near-vertical, smooth-walled trenches up to ten microns deep using Ar ion beam etching (IBE) and Ar/CHF3 reactive ion beam etching (RIBE) processes. Both Ar IBE and Ar/CHF3 RIBE processes can achieve etching rates of up to 100 nm/minute. Our patented RIBE process [K. E. Williams, et al. U.S. Patent No. 6,238,582 (29 May 2001)] has the additional advantage of providing up to a 5:1 selectivity for etching the LiNbO3 over a photoresist mask. The collimated beam available with IBE and RIBE allows control over feature profiles and redeposition removal. Using a combination of RIBE and a multiangle process, the sidewall angle and smoothness of the mask have been transferred into LiNbO3 substrates to depths between one and ten microns. This depth range can be expanded in either direction if an appropriate mask can be fabricated.

Efficient negative-ion sources for radioactive ion beam applications (abstract) Rev. Sci. Instrum. 73, 796 (2002);