Electronic skin (e-skin) presents a network of mechanically flexible sensors that can conformally wrap irregular surfaces and spatially map and quantify various stimuli 1-12 . Previous works on e-skin have focused on the optimization of pressure sensors interfaced with an electronic readout, whereas user interfaces based on a human-readable output were not explored. Here, we report the first user-interactive e-skin that not only spatially maps the applied pressure but also provides an instantaneous visual response through a built-in active-matrix organic light-emitting diode display with red, green and blue pixels. In this system, organic light-emitting diodes (OLEDs) are turned on locally where the surface is touched, and the intensity of the emitted light quantifies the magnitude of the applied pressure. This work represents a system-on-plastic 4,13-17 demonstration where three distinct electronic componentsthin-film transistor, pressure sensor and OLED arrays-are monolithically integrated over large areas on a single plastic substrate. The reported e-skin may find a wide range of applications in interactive input/control devices, smart wallpapers, robotics and medical/health monitoring devices.Although both passive 6,8,12 and active-matrix 1,2,5,9 designs can be used for enabling the predicted user-interactive e-skins, the active-matrix design is advantageous as it minimizes signal crosstalk and thereby offers better spatial resolution and contrast, and a faster response. In the active-matrix backplane circuitry, each pixel is controlled by a thin-film transistor (TFT) that acts as a switch for addressing either current-or voltage-driven devices. Here, we incorporate the active-matrix design into the e-skin by using semiconductor-enriched nanotubes 18 as the channel material of the TFTs. Carbon nanotube networks are proven to be a promising material platform for high-performance TFTs (refs 9,17,19-21) with high current drives needed for switching OLEDs (ref. 22). A schematic structure of a pixel of the user-interactive e-skin with an integrated TFT, OLED and pressure sensor is depicted in Fig. 1a. Each pixel in the active-matrix consists of a nanotube TFT with the drain connected to the anode of an OLED. The OLED uses a simple bilayer structure 23 and the colour of the emitted light is controlled by using different emissive layer materials (details in the Methods). In this work, red, green, blue and yellow colours are demonstrated. On top of the OLEDs, a pressure-sensitive rubber 1,5,24,25 (PSR) is laminated, which is in electrical contact with the cathode (that is, top contact) of the OLED at each pixel. The top surface of the PSR is coated with a conductive silver ink to act as the ground contact. Here, the conductivity of the PSR increases by an applied pressure 1,5,24,25 in the underlying OLED turning on. As illustrated in Fig. 1b, the single-pixel circuitry is integrated into an active-matrix array. The resulting system-on-plastic provides a touch user interface, allowing the pressure profile to be...

Optoelectronic effects of sidewall passivation on micro-sized light-emitting diodes (µLEDs) using atomic-layer deposition (ALD) were investigated. Moreover, significant enhancements of the optical and electrical effects by using ALD were compared with conventional sidewall passivation method, namely plasma-enhanced chemical vapor deposition (PECVD). ALD yielded uniform light emission and the lowest amount of leakage current for all µLED sizes. The importance of sidewall passivation was also demonstrated by comparing leakage current and external quantum efficiency (EQE). The peak EQEs of 20 × 20 µm µLEDs with ALD sidewall passivation and without sidewall passivation were 33% and 24%, respectively. The results from ALD sidewall passivation revealed that the size-dependent influences on peak EQE can be minimized by proper sidewall treatment.

Ultrasmall blue InGaN micro-light-emitting diodes (µLEDs) with areas from 10−4 to 0.01 mm2 were fabricated to study their optical and electrical properties. The peak external quantum efficiencies (EQEs) of the smallest and largest µLEDs were 40.2 and 48.6%, respectively. The difference in EQE was from nonradiative recombination originating from etching damage. This decrease is less severe than that in red AlInGaP LEDs. The efficiency droop at 900 A/cm2 of the smallest µLED was 45.7%, compared with 56.0% for the largest, and was lower because of improved current spreading. These results show that ultrasmall µLEDs may be fabricated without a significant loss in optical or electrical performance.