Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4Ωcm, Hall mobility of 2.65cm2∕Vs, and hole concentration of 1.44×1017cm−3 was achieved, and electrically stable over a month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played a key role in optimizing the p-type conduction of Li-doped ZnO thin films. Furthermore, ZnO-based p-n homojunction was fabricated by deposition of a Li-doped p-type ZnO layer on an Al-doped n-type ZnO layer.

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A poor interface or defected interfacial segment may trigger interfacial cracking, loss of physical and mechanical functions, and eventual failure of entire material system. Here we show a novel method to diagnose local interphase boundary based on interfacial electron work function (EWF) and its gradient across the interface, which can be analyzed using a nano-Kelvin probe with atomic force microscope. It is demonstrated that a strong interface has its electron work function gradually changed across the interface, while a weaker one shows a steeper change in EWF across the interface. Both experimental and theoretical analyses show that the interfacial work function gradient is a measure of the interaction between two sides of the interface. The effectiveness of this method is demonstrated by analyzing sample metal-metal and metal-ceramic interfaces.