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The new MOSFET-generation with SiC-materials seems well suited for power electronic converters up to 1200 V operating-voltage, and particularly for grid-feeding PhotoVoltaic-inverters, which transfer the DC power of the solar panel to the AC grid. Their high switching speed and low on-resistance RDS(on) allow the use of higher switching frequencies, which could mainly reduce the costs and weight of the converters. This paper shows a comparison between IGBT and SiC DMOSFET devices and first measurements of some 1200 V / 10 A SiC-DMOSFET samples made by CREE®.

Gallium Nitride (GaN) is known to provide the opportunity of producing power transistors with remarkable electrical properties, such as low on-state resistance and low switching energies. This paper demonstrates how the use of GaN power transistors along with the possibility of raising the switching frequency can lead to a significant reduction of volume, weight and production costs of a power converter while maintaining high efficiency. A 1 kW resonant LLC converter using 600 V GaN power transistors is presented.

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