1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

Wienhausen, Arne Hendrik; Kranzer, Dirk

doi:10.4028/www.scientific.net/msf.740-742.1123

Cited by 22 publications

(7 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Silicon-based conventional resonant converters in the power range of 1-3 kW normally operate with a frequency up to 350 kHz [1,129]. A resonant converter with the frequency of 1 MHz and peak efficiency of 94.1% is enabled using GaN HEMT in [130]. By using monolithic high voltage GaN power ICs that integrate GaN HEMT with the gate drive circuit in a small package, higher efficiency up to 98.3 % has been reported for the LLC resonant converter operating in 1 MHz switching frequency in a 3.2 kW power supply [131].…”

Section: Gan-based Llc Convertermentioning

confidence: 99%

High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

et al. 2021

View full text Add to dashboard Cite

Soft switching for both primary and secondary side devices is available by using LLC converters. This resonant converter is an ideal candidate for today’s high frequency, high efficiency, and high power density applications like adapters, Uninterrupted Power Supplies (UPS), Solid State Transformers (SST), electric vehicle battery chargers, renewable energy systems, servers, and telecom systems. Using Gallium-Nitride (GaN)-based power switches in this converter merits more and more switching frequency, power density, and efficiency. Therefore, the present paper focused on GaN-based LLC resonant converters. The converter structure, operation regions, design steps, and drive system are described precisely. Then its losses are discussed, and the magnets and inductance characteristics are investigated. After that, various interleaved topologies, as a solution to improve power density and decrease current ripples, have been discussed. Also, some challenges and concerns related to GaN-based LLC converters have been reviewed. Commercially available power transistors based on various technologies, i.e., GaN HEMT, Silicon (Si) MOSFET, and Silicon Carbide (SiC) have been compared. Finally, the LLC resonant converter has been simulated by taking advantage of LTspice and GaN HEMT merits, as compared with Si MOSFETs.

show abstract

Section: Gan-based Llc Convertermentioning

confidence: 99%

High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

et al. 2021

View full text Add to dashboard Cite

show abstract

“…These passive components can be dimensioned smaller with increasing switching frequency, reducing weight, size and cost of the overall system [24], [26]. Despite the higher prices of WBG semiconductors in comparison to silicon semiconductors, the overall system cost in WBG based power converters can be reduced significantly due to the size reduction of passive devices.…”

Section: A Advantages and Challenges Of Wide-bandgap Devicesmentioning

confidence: 99%

“…Especially in converters with GaN devices, which can operate at elevated MHz switching frequencies, the magnetic components often enforce a limit on the total power density, because the magnetic losses can not be dissipated easily [26]. To overcome this issue, sophisticated designs of high-frequency magnetic components must be pursued by intensive research [24].…”

Section: A Advantages and Challenges Of Wide-bandgap Devicesmentioning

confidence: 99%

Key Components of Modular Propulsion Systems for Next Generation Electric Vehicles

et al. 2017

View full text Add to dashboard Cite

Abstract-The objective of this paper is to provide an overview of emerging technologies for modular power converter architectures for electric vehicles. Nowadays, the most common electrical drive-train architecture exhibits one single inverter which is directly tied to the battery. As a consequence, only one high-voltage battery module can be applied and the dc-link voltage of the inverter and its apparent power rating is directly dependent on the available battery voltage. To overcome this restriction, modern power converter architectures with a higher degree of freedom have been proposed. These architectures exhibit modular dc-dc converters to allow different battery technologies to be linked to drive inverters operating independently from each other. To make this development feasible, new components and technologies are evolving which enhance the efficiency over mission cycles while ensuring further integration of the power-converter architectures.Wide-bandgap power semiconductors enable high switching frequencies and miniaturization of passive devices. Smart topology enhancements and control methods allow a significant loss reduction, in particular at light loads, resulting in a higher efficiency of the drive train over the entire driving cycle. Highly integrated bidirectional battery charger systems with intelligent charging strategies inhibit battery degradation and provide opportunities for grid stabilization. It is demonstrated how these technologies are realized and implemented to contribute to the development of future electric vehicles.

show abstract

“…The typical switching frequency of SiC MOSFETs in a power converter is in the range 200-500 kHz, whereas GaN HEMTs can be switched up to 2 MHz frequency. [18][19][20][21] For these reasons, GaN power devices are becoming a popular choice in the low-voltage (< 1000 V) commercial application segment.…”

Section: Introductionmentioning

confidence: 99%

Commercial GaN-Based Power Electronic Systems: A Review

Pushpakaran

Subburaj

Bayne

2020

Journal of Elec Materi

View full text Add to dashboard Cite

Wide bandgap semiconductor technology is gaining widespread acceptance in the area of high-power and high-temperature power electronics. Gallium nitride (GaN) not only has a wide bandgap of 3.4 eV and all the associated superior electronic properties but also enables the development of high-mobility power devices which is critical in increasing the power density of a power electronics system. Since a commercial GaN power transistor has a lateral structure as opposed to the traditional vertical device structure, commercially available devices are rated below 1000 V breakdown voltage with a maximum value of 900 V and typical value around 650 V. The primary focus of this review will be to introduce readers to the commercially available power electronic systems developed by various manufacturers which employ GaNbased power devices and highlight their remarkable performance which surpasses existing technology. This review also includes a brief introduction on GaN technology followed by current market study showing the roadmap of integration of GaN-based power electronics in the power industry.

show abstract

1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors

Cited by 22 publications

References 4 publications

High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

Key Components of Modular Propulsion Systems for Next Generation Electric Vehicles

Commercial GaN-Based Power Electronic Systems: A Review

Contact Info

Product

Resources

About