Hyaluronic acid might be beneficial for patients after knee arthroscopy. However, the results remain controversial. A systematic review and meta-analysis was conducted to explore the efficacy of hyaluronic acid following knee arthroscopy. Randomized controlled trials assessing the effect of hyaluronic acid in knee arthroscopy were included. Compared with control intervention after knee arthroscopy, hyaluronic acid treatment was found to significantly improve Western Ontario and McMaster Universities Osteoarthritis Index scores and decrease pain on motion, but had no substantial influence on pain scores at 2, 6 and 12 weeks after knee arthroscopy. Objective: To investigate the effect of hyaluronic acid on functional recovery and pain control in patients following knee arthroscopy. Design: A systematic review and meta-analysis was conducted to explore the efficacy of hyaluronic acid following knee arthroscopy. Subjects and methods: Randomized controlled trials (RCTs) assessing the effect of hyaluronic acid in knee arthroscopy were included. A meta-analysis was performed using the random-effect model. Results: Six RCTs involving 310 patients were included in the meta-analysis. Overall, compared with control intervention following knee arthroscopy, hyaluronic acid treatment was found to significantly increase Western Ontario and McMaster Universities Osteoarthritis Index (WOMAC) scores (mean difference 11.43; 95% confidence intervals (95% CI) 1.39-21.47; p = 0.03), but had no impact on pain scores at 2 weeks (mean difference-0.16; 95% CI-0.81-0.49; p = 0.63), pain scores at 6 weeks (mean difference 0.01; 95% CI-0.86-0.89; p = 0.98), pain scores at 12 weeks (mean difference-0.51; 95% CI-1.56-0.53; p = 0.34). In addition, pain on motion was significantly reduced after knee arthroscopy (risk ratio (RR) 0.22; 95% CI 0.06-0.79; p = 0.02). Conclusion: Compared with control intervention after knee arthroscopy, hyaluronic acid treatment was found to significantly improve WOMAC score and decrease pain on motion, but had no substantial influence on pain scores at 2, 6 and 12 weeks after knee arthroscopy.

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In this paper, performance degradation after heavy-ion irradiation in novel quasi-SOI devices are investigated and compared with bulk Si MOSFETs through experiment and simulation. A quasi-SOI device is characterized with an L-type insulator surrounding the source and drain regions. The I-V characteristic of the quasi-SOI device may degrade after heavy-ion irradiation and the degradation phenomena are demonstrated and statistically analyzed. The results show that compared with bulk Si devices, quasi-SOI devices illustrate a reduced performance degradation induced by heavy-ion irradiation. Therefore, quasi-SOI devices are promising candidates for future space applications.

The impact of a single event on the performance of CMOS current mirrors (CMs) is studied experimentally in this paper. Both basic and cascode CMs based on bulk Si and PDSOI substrates are employed to demonstrate the permanent effects of damage generated by heavy-ion strikes. The results show that the mismatch of the CMs (bulk Si/PDSOI basic/cascode CMs) changes after heavy-ion irradiation, which means that the accuracy of the output current may need re-evaluation when CMs are operated in a harsh environment. For output impedance, a drastic reduction of 40% is observed for small (W/L=0.5 μm/0.25 μm) PDSOI basic CMs. This may limit the application of CMs when high output impedance is required to provide a large gain or common mode rejection ratio. Different types of performance degradation after heavyion irradiation are classified, and the characteristics are also statistically compared between different types of CM. The mechanisms of these changes are then discussed and traced back to the damage induced by the random heavy-ion strikes. These results demonstrate the permanent effects of damage generated by heavy-ion strikes in CMOS CMs, and provide insights into the impact of heavy-ion irradiation on analog circuits.