The detection of light emitted in fast scintillating fibers and Cerenkov radiators used for fiber calorimetry and tracking applications in high energy colliders, requires fast detector arrays with high sensitivity to short wavelength photons. Photomultiplier tubes, the traditional imaging detectors for short wavelength optical radiation, have limited spatial resolution and require expensive anti-magnetic shielding. We report on short wavelength sensitivity improvement and detection efficiency performance for a novel p-n junction planar structure silicon avalanche photodiode (APD) array, operated in Geiger mode. The APD array provides a high sensitivity detector for applications requiring the detection of light spatial distributions with single photon sensitivity.

This paper descrlbes a method to determine the temperature rise of a power MOSFET during an unclamped Inductive switching test (UIS). The procedure consist of the following steps : -breakdown voltage avalanche resistance measurement -breakdown voltage temperature coefficient calibration -voltage waveform monitoring during the UIS test A first order model of the voltage waveform allows the computing of the junction temperature rise due to seifheating during a high energy, long pulse UIS test. The estimations are compared with those obtained based on the thermal impedance concept.

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A state-of-the art family of 1200 V junction barrier Schottky (JBS) diodes was developed. These devices are highly competitive in switching applications thanks to low specific series resistance (1.8 mΩ.cm2 at current rating) and low capacitive charge (1420 nC.cm-2 at 800 V). A uniform avalanche distribution over the active area combined with an optimized high-voltage termination provides industry-leading UIS capabilities. Stringent reliability tests were performed to meet the qualification requirements for the industrial market.