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Heteroepitaxial diamond films were selectively nucleated and grown on mirror-polished single crystalline (100) silicon by microwave plasma assisted chemical vapor deposition (MWCVD). The silicon substrates were coated by 0.5 μm thick SiO2 films patterned by a standard photolithography process. The selective nucleation was performed under a negative substrate bias condition. Results show that fine patterns of (100) oriented diamond films can be obtained with high deposition selectivity and fine-line definition. In spite of the relatively large crystal size a structure edge roughness of <0.3 μm was achieved.

The influence of nitrogen doping on the electrical properties of polycrystalline diamond films has been studied. The films were prepared in a microwave plasma chemical vapor deposition process using a H2/CH4/N2 gas mixture. The CH4 concentration was held constant at 0.5% and the nitrogen to carbon atomic ratio was varied between 0.01 and 0.2. The phase purities, surface morphologies, and the nitrogen contents of the films were analyzed by Raman spectroscopy, scanning electron microscopy, and secondary-ion mass spectroscopy, respectively. From current-voltage characteristics at field strengths up to 106 V cm−1 and in the temperature range between 300 and 800 K the conductivity was determined. The dielectric strength was obtained from the breakdown voltage measured using a voltage ramping rate between 50 and 100 V s−1. A minimum in high field and high-temperature conductivity and a maximum in dielectric strength was found for the samples prepared with a nitrogen to carbon atomic ratio of 0.02. Compared with nitrogen free samples the conductivity is lowered by more than three orders of magnitude and the dielectric strength is enhanced by a factor of two. The results will be discussed in terms of compensation of acceptor states by nitrogen donors and structural changes of the films.

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