1997
DOI: 10.1016/s0925-9635(96)00681-4
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Thermal resistance and electrical insulation of thin low-temperature-deposited diamond films

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Cited by 23 publications
(10 citation statements)
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“…diamond film with k n = 600 W m −1 K −1 investigated by Verhoeven et al (21) on a silicon substrate.…”
Section: Metrologymentioning
confidence: 99%
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“…diamond film with k n = 600 W m −1 K −1 investigated by Verhoeven et al (21) on a silicon substrate.…”
Section: Metrologymentioning
confidence: 99%
“…The lateral thermal conductivity of films on substrates has been measured using the transient thermal grating technique (21,49,50), which is depicted in Figure 4b. Pulsed laser radiation interferes on the sample surface, yielding a harmonic spatial variation of energy absorption.…”
Section: Metrologymentioning
confidence: 99%
“…3(b)]; this variation may be related to the slightly inhomogeneous initial seeding conditions or different initial microstructual disorders. 46,47 Figure 3(c) shows j Dia as a function of temperature. All samples exhibit a negligible temperature dependence.…”
mentioning
confidence: 99%
“…Large discrepancies are observed for experimental conductance measured at the tungsten-diamond interface and reported values scale from 40 MW·m −2 ·K − 1 to 200 MW·m −2 ·K − 1 [19,20]. It has been shown that this conductance is very dependent on the surface properties (as roughness and crystalline orientation), on the deposition method and on the heat treatment applied [21][22][23]. In this model, a mean thermal boundary conductance of 100 MW·m −2 ·K −1 is assumed to represent the interface between a tungsten layer and a smooth single crystal diamond surface.…”
Section: Thermal Boundary Resistancementioning
confidence: 97%