Zirconium silicate (ZrSixOy) films have been sputtered by comagnetron-reactive sputtering. The composition of ZrSixOy has been controlled by adjusting the sputtering powers of Si and Zr targets to achieve various effective dielectric constants. The sputtered silicate layers showed low equivalent oxide thickness of 14.5 Å with a low leakage of 3.3×10−3 A/cm2 at −1.5 V relative to flat band voltage. The silicate films also exhibited good high-temperature stability and smooth interfacial properties on silicon substrate.

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Effect of dopant penetration on electrical characteristics of polysilicon gate HfOz gate dielectric MOSFET's has been studied quantitatively, for the first time. Significant boron penetration was observed at high temperature dopant activation, which degrades not only flatband voltage (V,) but channel carrier mobility. Surface nitridation prior to Hf02 deposition can suppress boron penetration along with equivalent oxide thickness (EOT) reduction.

Performance of polysilicon gate HfOz MOSFET's is discussed in terms of gate leakage current and effects of NH3 surface nitridation technique on boron penetration and carrier mobility. Negative bias temperature instability (NBTI) on HfOp PMOSFET's was evaluated for the first time. Although surface nitridation enhanced NBTI degradation, HfOz PMOSFET's without nitridation 'show sufficient . NBTI immunity.

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