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Electrical and chemical characteristics of metal-oxide semiconductor field-effect transistors (MOSFETs) prepared by low-thermal-budget (∼600 °C) NH3 post-deposition annealing of HfSiON gate dielectric have been investigated. Compared to control Hf-silicate, HfSiON showed excellent thickness scalability, low leakage current density (J), and superior thermal stability. With proper annealing-time optimization, effective oxide thickness as low as 9.2 Å with J<100 mA/cm2 at gate voltage Vg=−1.5 V has been achieved. C–V hysteresis of HfSiON MOSFET was found to be small (<20 mV). Unlike NH3 surface nitridation (NH3 pre-treatment prior to Hf-silicate deposition), no degradation in Gm (transconductance), Id–Vg (drain current–gate voltage), or Id–Vd (drain current–drain voltage) characteristics has been observed.

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Performance of polysilicon gate HfOz MOSFET's is discussed in terms of gate leakage current and effects of NH3 surface nitridation technique on boron penetration and carrier mobility. Negative bias temperature instability (NBTI) on HfOp PMOSFET's was evaluated for the first time. Although surface nitridation enhanced NBTI degradation, HfOz PMOSFET's without nitridation 'show sufficient . NBTI immunity.