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The article demonstrates the fundamental possibility of creating microstructures for various functional purposes using the capabilities of the two-photon femtosecond polymerization method. The developed technological approach for creating a micro-optical holder for standard single-mode and multimode fibers is demonstrated. This type of holder can be used to manufacture a unit for optical matching of optical fibers with sensitive optical elements. The possibility of optical matching of fibers with a superconducting single-photon detector, an array system of bolometric superconducting microbridges, and spherical self-formed microlenses by near infrared-sensitive photopolymerization has been experimentally shown. The device manufacturing process was carried out in a combined single laser micromachining facility using femtosecond laser radiation for lithography with submicron resolution, texturing of the sensor surface, and the formation of microstructures for installing single-mode optical fibers.

This study presents a multistep process of plasma-enhanced atomic layer deposition of ultrathin superconductive films of niobium nitride from metal organic precursor tris(diethylamido)(tert-butylimido)niobium(V). While using NH3/Ar and H2/Ar gas mixtures as reactants, a comprehensive analysis was performed pertaining to the influence of operating parameters, such as the duration of plasma exposure to the H2/Ar reactant, gas-flow ratio, plasma exposure duration and power of inductively coupled plasma source for the NH3/Ar reactant, on the obtained films’ parameters, such as resistivity, superconducting transition temperature and critical current density. Amorphous silicon oxide was used as the substrate. It was shown by experiments, that films’ resistivity affects the value of critical current density. As a result, the all-time record resistivity of 147 µΩ·cm was achieved for films with a thickness of 8 nm. When cooling in the Gifford McMahon closed-cycle cryostat, the values of superconducting transition temperature and critical current density were equal to 12.3 К and 9 МА/cm2 at a liquid helium temperature, respectively.

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