No abstract

In this work, the authors present a study of the resistive switching effect (RS) in Co0.2TiO3.2 (CTO) in a thin film structure Pt/CTO/ITO. The identification of a structure of low crystallinity with different deposition times is seen in the diffractograms with a certain tendency of orientation in the plane (311) of the inverted spinel of space group Fd‐3m. Electrical measurements I–V highlight the appearance of RS effect predominated by unipolar filamentary mechanism. The retention of charge in the device shows good stability and separation of HRS‐LRS states with ROFF/RON ≈106 ratio. The authors are able to demonstrate that Co0.2TiO3.2 presents promising performance for application in non‐volatile memories.

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ZnO/ZnO-Al thin films were grown aiming the development of a memristor. Electrical voltage sweeps were imposed to induce dopant migration and to achieve several resistance states. A memristor behavior was observed, presenting adaptation to external electrical stimulus. Voltage sweeps occurred under the influence of violet light and in the dark, alternately, and the influence of the photon incidence on the current intensity was noticed. Throughout the alternating cycles between light and dark, less resistance was observed under illumination, but the migration of Al and O ions caused the formation of Al 2 O 3 and ZnO oxides, resulting in a gradual increase in resistance. With constant voltage, the device presented continuous modification of resistance and sensitivity to the violet light with generation of free carriers. These results bring new opportunities for using memristors as violet light sensors as well as new insights for light-controlled memristor development.