The need of data storage devices and new technologies continues to grow with more robust and stable functioning capability. With that, improvement and utilization never stop for a seamless output. One device that is currently on new product introduction is a quad-flat no-leads (QFN) utilizing a tapeless leadframe technology. The new device used highly conductive glue with metal spacer and has experienced gross glue voids defect parts per million (ppm). Glue voids were measured for cumulative voids criteria, with values higher compared to the specification. The study used analysis of variance (ANOVA) on the dispense needle diameter and revealed the effect levels of needle diameter on cumulative voids reduction. For subsequent works, the configuration could be applied for packages with similar requirement.

The paper focused on the evaluation of quad-flat no-leads (QFN) semiconductor package with small silicon die on different machine platforms to achieve a higher bond line thickness (BLT) of greater than 30 µm. The characterization or evaluation was narrowed down into two main diebonding machines with the objective of attaining a higher BLT for small die. High BLT capability is desired to generate clearance for the shrinkage of the glue, henceforth mitigating the glue voids. Diebond Machine 2 was able to achieve the target BLT with 30.89 µm average compared to 18.25 µm for Machine 1. Moreover, the target BLT range could only be achieved in Machine 2 only. For future works, the machine and configuration could be used for devices with comparable requirement.

The paper presents a practical procedure in selecting the best candidate for die attach epoxy control or anti-epoxy bleed-out (anti-EBO) concentration during the introduction of new leadframe configuration. Three different criteria were implemented to measure the relative impact of the anti-EBO into the different interfaces inside a quad-flat no-leads multi-row (QFN-mr) leadframe unit. Die shear test is performed to measure the shear strength and the compatibility of the anti-EBO to the adhesive material. EBO measurement is performed herewith to study the propagation of epoxy bleed-out on the surface of the leadframe with reference to the different level of anti-EBO concentration. Package reliability is employed study the response of different interfaces directly in-contact with anti-EBO through thermal-cycling scenario. Ultimately, understanding the effect of anti-EBO into different set of tests provided a systematic way of selecting appropriate leadframe parameters for QFN-mr leadframe product.

New design for a certain issue in semiconductor industry is another way to modify the standard configuration into specified limit or to make a possible solution of the problem.  This paper presents a new modified design for wirebond top plate with a bias platform structure that will maintain a consistent second bond into a leadframe leads with half-etch configuration on quad-flat no-leads (QFN) packages especially in wirebond process. This paper used a side by side comparison to proof that the new design is better than the older design.  With the new specialized wire clamp and top plate design, parts per million (PPM) level performances is improved by almost 90%.

In semiconductor packaging industry, silhouetted die defect is occasionally encountered in singulation process esp. on substrate land grid array (LGA) package with tight clearances. This paper is focused on the prevention of the silhouetted die occurrence as it would affect the assembly yield performance of the device. The silhouetted die is caused by the tight clearance of die edge to package edge, given the machine and process tolerances. Process enhancement and optimization were done through adjusting the die placement accordingly as per the defined measurement. Eventually, the occurrence of silhouetted die was successfully mitigated by formulating the appropriate die placement references.