The paper considers circuit engineering methods for protecting the electronic component base from the effects of heavy charged particles. One of the main methods is to increase the capacity of the device, which leads to an increase in the capacity of diffusion regions and a decrease in the frequency of single events. The structure of a capacitor is shown, which is connected to various nodes of the circuit to increase the sensitivity of the capacitance of the node. The article focuses on the method of using active RC circuits in the feedback circuit of a storage device cell. The advantages and disadvantages of the methods of using a storage device cell with internal redundancy are noted. The paper shows that the use of circuit engineering methods will provide the required level of fault and fault tolerance to the effects of heavy charged particles.

The technology of radiation-resistant CMOS VLSI is based on industrial IC technology. The design uses feedback circuits and guard rings to compensate for single effects of cosmic particles (SEE). In most critical cases, these influences in digital circuits lead to single faults (SEU), which temporarily disrupt the state of memory cells, to latching (SEL), and in the long term to a catastrophic change of state. Various space programs confirm great prospects for their use in future space structures. The article discusses the effects of using radiation-resistant CMOS technology, technology based on a silicon-on-sapphire structure, CMOS technology on an insulating substrate taking into account typical characteristics, SIMOX-SOI technology, which consists in separation by implantation of oxygen ions. In new designs of circuits, more advanced algorithms should be implemented for the future.

High values of photocurrents associated with instantaneous radiation can cause a transient voltage drop on the power buses, and some circuits are sensitive to currents generated in the element. This can lead to malfunctions ranging from temporary loss of functioning to data loss by memory and even to final damage to the product. The library elements are accessed at several levels of radiation, as for the design of elements, options for special simulation modeling and methods for creating topology. The article discusses the technologies of radiation-resistant ICS, their effectiveness on silicon-on-insulator structures, compared with a similar scheme on bulk silicon with the same design standards. Radiation-resistant semiconductor specialized devices with increased radiation resistance are also considered. Special attention is paid to the technology of implementation of radiation-resistant semiconductor storage devices. In relation to radiation-resistant logic devices, two directions are considered: the use of specialized logic circuits and user-programmable gate arrays.

Without the creation of Russian technology for designing SoC, it is impossible to provide a modern level of VLSI development, both for defense and civil applications. This is in line with global development trends. Nevertheless, it is necessary to highlight only those essential processes that are most consistent with Russian realities and can help in solving specific problems of the defense industry and the economy as a whole at the lowest cost and in the shortest possible time. The most important element of the implementation of SoC technology is the organization of a single sign-on to locate the production of microcircuits based on this technology. This will allow to drastically reduce costs, to certify the system of complex functional blocks, to increase the reliability and sustainability of developments. Even in organizational terms, this will allow an organized firm (conditionally - Silicon Gate) to be included as a certified chip manufacturer in any contracts with MO. The article discusses the structuring of programs for the development of domestic technology of SoC systems on a chip, the coordination of the SoC area of developments and complex functional blocks, as well as their information support.