There have been comparatively few investigations reported of radiation effects in zeolites, although it is known that these materials may be modified substantially by exposure to ionizing radiation. Thus, by exposure to γ-rays or high-energy particles, the charge states of atoms may be changed so to create, and accumulate, lattice point defects, and to form structurally disordered regions. Such a technique may permit the creation, in a controlled fashion, of additionally useful properties of the material while preserving its essential stoichiometry and structure. Accordingly, we present an application, in which the cation-exchange capacity of a natural zeolite (clinoptilolite) is substantially enhanced, for the treatment/decontamination of water contaminated with radionuclides e.g. 134Cs, 137Cs and 90Sr, by its exposure to high-energy (8 MeV) electrons, and to different total doses.

Abstract:Infrared (IR) absorption and luminescence in chemically and radiationmodified natural Armenian Zeolite (clinoptilolite) samples have been studied. The luminescence was studied in 390-450 nm and 620-710 nm wavelength bands, and the IR measurements were carried out in the 400-5400 cm −1 range. It is shown that the luminescence intensity depends on the content of pure clinoptilolite in the samples and, probably on the distribution of "passive" luminescence centers over Si and Al sites that became "active" under radiation or chemical treatment. The samples of electron irradiated clinoptilolite have higher luminescence intensity than the chemically and thermally treated ones. A decrease in the intensity of IR absorption bands at 3550 cm −1 and 3650 cm −1 was found after irradiation.

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This paper presents the results of a study of long-time relaxation (LR) and residual conductivity in n-type gallium phosphide (GaP) crystals irradiated by 50 MeV electrons. A manifold increase in photosensitivity and quenching of residual conductivity was found as a result of irradiation. It is shown that LR in GaP is due to disordered regions (generated by electron irradiation) which have conductivity close to self one. The Fermi level in the disordered regions is determined by which is located deep in the forbidden band (Е е − 1.0 eV). LR effect is mainly explained by a spatial separation of electrons and holes, recombination of which is prevented by potential barriers. The observed increase in conductivity is associated with the increase in the concentration of minority carriers as well as with increase of the Hall mobility at the sample illumination.