The authors investigated the electrical compensation induced by deep levels introduced in metal organic vapor phase epitaxy grown n+-InGaP∕GaAs epitaxial layers by high temperature Fe implantation. The activation of the Fe2+-related deep levels has been assessed by current-voltage analyses performed at different temperatures. In the framework of the space charge limited current model, they determined the energy location in the gap of the deep levels that control the electrical properties of the semi-insulating epilayers. A donor level which acts as an electron trap located at EC−0.5eV and a Fe-related acceptor level which is responsible for the stable increase of resistivity located at EV+0.72eV were identified.

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We report on the thermal evolution of the deep levels in Fe implanted and annealed InP. The position and nature of the dominant traps have been assessed by current-voltage-temperature measurements analyzed in the framework of the space-charge-limited current model. For low temperature annealing the conduction properties of the material are controlled by a damage-related donor located at E-C-0.21 eV. A deep donor-deep acceptor electrical compensation mechanism has been assessed after high temperature annealing. The dominant traps are located at E-C-0.55 eV and E-V+0.72 eV. The latter is associated with the Fe2+/3+ center which is responsible for the semi-insulating properties