The periodic table provides a classification of the chemical properties of the elements. But for the heaviest elements, the transactinides, this role of the periodic table reaches its limits because increasingly strong relativistic effects on the valence electron shells can induce deviations from known trends in chemical properties. In the case of the first two transactinides, elements 104 and 105, relativistic effects do indeed influence their chemical properties, whereas elements 106 and 107 both behave as expected from their position within the periodic table. Here we report the chemical separation and characterization of only seven detected atoms of element 108 (hassium, Hs), which were generated as isotopes (269)Hs (refs 8, 9) and (270)Hs (ref. 10) in the fusion reaction between (26)Mg and (248)Cm. The hassium atoms are immediately oxidized to a highly volatile oxide, presumably HsO(4), for which we determine an enthalpy of adsorption on our detector surface that is comparable to the adsorption enthalpy determined under identical conditions for the osmium oxide OsO(4). These results provide evidence that the chemical properties of hassium and its lighter homologue osmium are similar, thus confirming that hassium exhibits properties as expected from its position in group 8 of the periodic table.
We report on hybrid microtubes and rings fabricated from rolled-up strained metal–semiconductor SiGe/Si/Cr and metal–insulator–semiconductor SiGe/Si/SixNy/Cr films. For making suspended microtubes, a method of directional rolling of the patterned films by anisotropic underetching of silicon substrate was introduced. It is shown quantitatively that Cr and SixNy layers are highly strained, the tensile stress being sufficient to cause the rolling-up of the hybrid films into microtubes of preset diameter. The proposed controllable and reproducible technology is promising for fabricating cylindrical-shaped microcapacitors, induction coils, transistors, and building blocks of microelectromechanical devices.
The hybrid pixel detectors used in the high energy physics experiments currently under construction use a vertical connection technique, the so-called bump bonding. As the pitch below 100 µm, required in these applications, cannot be fullfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflowed indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector.The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflowed afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a second reflow is performed for self alignment and obtaining high mechanical strength.For the placement of the chips a manual and an automatic machine were constructed. The former is very flexible in handling different chip and module geometries but has a limited throughput while the latter features a much higher grade of automatisation and is therefore much more suited for producing hundreds of modules with a well defined geometry.The reliability of this process was proven by the successful construction of the PILATUS detector. The construction of PILATUS 6M (60 modules) and the CMS pixel barrel (roughly 800 modules) will start in 2005.
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