We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm ¾. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion and inversion.

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The purpose of this article is to report the results of an experiment designed to investigate the density of interface states (DOS) measured at the normalSi­SiO2 interface immediately following rapid thermal annealing (RTA) (1040°C) in a nitrogen false(N2false) ambient. This work extends previous publications on Si(100) by examining (111), (110), and (100) silicon orientations. The DOS profiles were examined using a mercury probe capacitance-voltage technique, and characteristic peaks in the DOS across the energy gap were obtained for all orientations. Consideration of there results in relation to other works indicates that the peak features in the DOS profile after an RTA in N2 are a consequence of unpassivated dangling bond defects for the respective orientations. The significance of these results is considered. © 2002 The Electrochemical Society. All rights reserved.