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A cluster tool based technique for in situ vapor H F cleaning, ultra thin oxide growth and polysilicon deposition is compared to conventional processing i n forming polysilicon emitters and polysilicon bit-cell contacts in a 4MbitI0.5um BiCMOS FSRAM process. Results are reported which indicate that the control achieved with cluster tool processing provides greater flexibility i n simultaneously optimizing the performance of both the polysilicon emitters and bit-cell contacts.