Abstract-In this paper, we propose a simple methodology for the extraction of the top and sidewall mobility in FinFET like triple-gate device architectures. The underlying assumptions are outlined and verified by simulations and experiments. Using this model, the top and sidewall mobility on both n-and p-channel FinFETs, fabricated with various fin-patterning processes and gate dielectrics, was extracted. It is shown that the choice of the hard mask and corner-rounding processes and the gate dielectric impacts the top and sidewall mobility differently. The proposed methodology provides a powerful tool for technologists to optimize the gate stack and fin-patterning processes. It also provides a simple model to capture the anisotropy of mobility in device and circuit simulators.

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A bright green luminescence, with an emission bandpeak at 5250A and an excitation bandpeak at 3465A, has been reported for germanium-doped sodalite powders. This article reports the results of an investigation of the properties of u.v. absorption band at 3450A that is shown to be responsible for the luminescence. A settled slide technique was used to prepare samples so that small variations in the absorption band could be detected. Experimental results are presented that show the effect of the hydrogen annealing temperature, hydrogen annealing time, and F-center creation on the u.v. absorption band intensity. The results indicate a definite relationship between the u.v. absorption band and the luminescence. The results of the coloration experiments show that the luminescent centers are associated with thermally erasable F-centers while they are independent of photoerasable F-centers. The u.v. band was found to exist in sodalite: C1, Br, and I. While the band intensities differ for those powders, the peak wavelengths are exactly the same. Possible models for both coloration and luminescence are discussed.The luminescent properties of germanium-doped synthetic sodalite powders have been reported by Todd (1, 2). The luminescence is characterized by an emission bandpeak at 5250A and an excitation bandpeak at 3465A. Todd studied the effect of the hydrogen annealing temperature, the hydrogen annealing time, and F-center creation on the luminescent intensity. Information regarding the number of luminescent centers was obtained indirectly rather than by direct experimental observation. The intensity of the luminescence generated within the colored powders was calculated using data obtained from measurements of observed luminescence and diffuse reflectance spectra (2). That study found that F-center creation by electron beam coloration greatly reduces the observed luminescence. This reduction results partially from the absorption of generated luminescence by F-centers while further reduction results from actual quenching of luminescent centers. The quenching was shown to be associated with the creation of thermally erasable F-centers while the creation of optically erasable Fcenters did not cause quenching.This article reports the observation of a u.v. absorption band at 3450A in germanium-doped sodalite powders. The purpose of this study was to determine if this band represents the absorption due to the luminescent centers reported earlier (2). If that were the case, one could directly observe the behavior of the luminescent centers under various experimental conditions rather than use indirect mathematical calculations to obtain the results. A technique for detecting small variations in the u.v. absorption spectra of sodalite powders is described. This technique is used to determine the effect of the hydrogen annealing temperature, hydrogen annealing time, and F-center creation on the u.v. absorption band intensity. The results of these experiments are compared to those reported by Todd (2). Experimental Material prepar...

The coloration and erasure properties of the F-center in cathodochromic sodalite as a function of various chemical substitutions were studied. Several chemical compositions of halogen (Br, C1, I) and Ge-doped sodalite:Br were grown by the hydrothermal growth technique. The absorption energy EF and the thermal activation energy ET of the electron in the F-center were measured as a function of the material lattice parameter ao. The F-band energy EF was found to be a function of ao alone, while the activation energy was a function of both the type and the location of the chemical substitution in the structure of sodalite.

Integrated Force Arrays (IFAs)12345 are thin film linear actuators which operate with substantial displacement and force. The methods of attachment of these devices to external systems are under development. Our current methods to incorporate IFAs in an scanning ultrasound imaging systems as well as a new material and method for attachment will be described. I . INTRODUCTIONThe purpose of this paper is twofold. First, it will describe the current progress in using IFAs as linear actuators for scanning a miniature PZT transducer for intra luminal ultasound imaging. Second, it will discuss the materials and methods involved in the development of a photoimageable adhesIve for joining micromachined parts. Such a material might be used to advantage in a range of MEMS applications including IFA attachment. 248 SPIE Vol. 3046 • 0277-786X/971$1 0.00 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/25/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx