A novel ultrafast laser processing technique is used to create self-assembled micro/nano structures on a silicon surface for efficient light trapping. Under appropriate experimental conditions, light reflection (including scattering) of the Si surface has been reduced to less than 3% for the entire solar spectrum and the material appears completely black to the naked eye. A post-chemical cleaning is applied to remove laser-redeposited material and induced defects. Optical, morphological, and structural characterizations have been carried out on as-laser-treated and post-chemically cleaned surfaces. Finally, we report for the first time the total efficiency of over 14% and high external quantum efficiency (EQE) results on photovoltaic devices fabricated on the ultrafast-laser-induced micro/nano structured silicon wafer, which can be further improved upon process optimization.

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Abstract-In this paper, we propose a simple methodology for the extraction of the top and sidewall mobility in FinFET like triple-gate device architectures. The underlying assumptions are outlined and verified by simulations and experiments. Using this model, the top and sidewall mobility on both n-and p-channel FinFETs, fabricated with various fin-patterning processes and gate dielectrics, was extracted. It is shown that the choice of the hard mask and corner-rounding processes and the gate dielectric impacts the top and sidewall mobility differently. The proposed methodology provides a powerful tool for technologists to optimize the gate stack and fin-patterning processes. It also provides a simple model to capture the anisotropy of mobility in device and circuit simulators.