Vertical Schottky diodes were fabricated on the bulk GaN substrate with decreasing impurity concentration from N-face to Ga-face. An array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively. The Schottky diode exhibits a minimum specific on-state resistance of 1.3 m cm 2 and a maximum breakdown voltage of 600 V, resulting in a figure-ofmerit of 275 MW cm −2 . An ultra-low reverse leakage current density of 3.7 × 10 −4 A cm −2 at reverse bias of 400 V was observed. Temperature-dependent I-V measurements were also carried out to study the forward and reverse transportation mechanisms.

We report on the photovoltaic characteristics of organic/inorganic hybrid solar cells fabricated on 'flexible' transparent substrates. The solar cell device is composed of ZnO nanorod array and the bulk heterojunction structured organic layer which is the blend of poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM). The ZnO nanorod array was grown on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrates via a low-temperature (85 • C) aqueous solution process. The blend solution consisting of conjugated polymer P3HT and fullerene PCBM was spin coated at a low spinning rate of 400 rpm on top of the ZnO nanorod array structure and then the photoactive layer was slow dried at room temperature in air to promote its infiltration into the nanorod network. As a top electrode, silver was sputtered on top of the photoactive layer. The flexible solar cell with the structure of PET/ITO/ZnO thin film/ZnO nanorods/P3HT:PCBM/Ag exhibited a photovoltaic performance with an open circuit voltage (V OC ) of 0.52 V, a short circuit current density (J SC ) of 9.82 mA cm −2 , a fill factor (FF) of 35% and a power conversion efficiency (η) of 1.78%. All the measurements were performed under 100 mW cm −2 of illumination with an air mass 1.5 G filter. To the best of our knowledge, this is the first presentation of investigation into the fabrication and characterization of organic/inorganic hybrid solar cells based on bulk heterojunction structured conjugated polymer/fullerene photoactive layer and ZnO nanorod array constructed on flexible transparent substrates.

Label-free electrical detection of deoxyribonucleic acid (DNA) hybridization was demonstrated using an AlGaN/GaN high electron mobility transistor (HEMT) based transducer with a biofunctionalized gate. The HEMT DNA sensor employed the immobilization of amine-modified single strand DNA on the self-assembled monolayers of 11-mercaptoundecanoic acid. The sensor exhibited a substantial current drop upon introduction of complimentary DNA to the gate well, which is a clear indication of the hybridization. The application of 3 base-pair mismatched target DNA showed little change in output current characteristics of the transistor. Therefore, it can be concluded that our DNA sensor is highly specific to DNA sequences. V

Vertical Schottky rectifiers were fabricated on two GaN wafers synthesised by hydride vapor phase epitaxy (HVPE) process: n‐ epilayer on n+ bulk and n‐ bulk. Full backside ohmic contact and circular Schottky contacts were deposited on the N face and Ga face of the substrate, respectively. The devices showed excellent electrical characteristics. The device fabricated on n‐ epilayer on n+ bulk substrate showed a breakdown voltage of 348 V, a specific on‐state resistance of 4.2 mΩ·cm2 and a leakage current density of 9.2×10‐6 A/cm2 at ‐90 V. The device fabricated on n‐ bulk substrate showed a breakdown voltage of 600 V, a specific on‐state resistance of 1.3 mΩ·cm2 and a leakage current density of 8.1×10‐8 A/cm2 at ‐100 V. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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