2014
DOI: 10.1109/tnano.2014.2340132
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Solution-Based Fabrication of Carbon Nanotube Bumps for Flip-Chip Interconnects

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Cited by 7 publications
(4 citation statements)
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“…The loss per transition of the CNT interconnect is less than 0.3 dB higher than that of the gold interconnect (each structure has two transistions), which is 1 dB lower loss compared to the CVD grown CNT interconnect in [8]. We believe this is caused by two factors: inter-tube tunneling is the main mechanism of conduction, due to the SDS dielectric coating on CNT [9] and contact resistance between gold CPW and CNT. Possible methods to improve the performance of the bumps include more thorough removal of SDS, better work function match by doping the CNT bumps with metallic nanoparticles or adding a transition layer between CNT and gold contact.…”
Section: B High Frequency Simulation and Measurementmentioning
confidence: 87%
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“…The loss per transition of the CNT interconnect is less than 0.3 dB higher than that of the gold interconnect (each structure has two transistions), which is 1 dB lower loss compared to the CVD grown CNT interconnect in [8]. We believe this is caused by two factors: inter-tube tunneling is the main mechanism of conduction, due to the SDS dielectric coating on CNT [9] and contact resistance between gold CPW and CNT. Possible methods to improve the performance of the bumps include more thorough removal of SDS, better work function match by doping the CNT bumps with metallic nanoparticles or adding a transition layer between CNT and gold contact.…”
Section: B High Frequency Simulation and Measurementmentioning
confidence: 87%
“…The CNT bumps were then fabricated using a solution-based deposition method. Details about the fabrication process are described in previous work [9]. In brief, a photolithography step was performed to define a photoresist pattern.…”
Section: Design and Fabrication Of Flipmentioning
confidence: 99%
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