We present an ultrafast laser with a near-diffraction-limited beam quality delivering more than 1.4 kW of average power in the visible spectral range. The laser is based on second harmonic generation in a lithium triborate crystal of a Yb:YAG thin-disk multipass amplifier emitting more than 2 kW of average power in the infrared.

Thin-disk multipass amplifiers represent one of the most powerful approaches to scale the average and peak powers of ultrafast laser systems. The present paper presents the amplification of picosecond and femtosecond pulses to average powers exceeding 2 and 1 kW, respectively. Second-harmonic generation in lithium-triborate crystals with powers higher than 1.4 kW and 400 W at a wavelength of 515 nm with picosecond and femtosecond pulse durations, respectively, are also reported. Furthermore, third-harmonic generation was demonstrated with output powers exceeding 250 W at a wavelength of 343 nm. Finally, processing of silicon, metals, and polycrystalline diamond with fs pulses at an average power of 1 kW is presented to demonstrate removal rates that are improved by orders of magnitude as compared to state-of-the-art techniques.

We present an improved multipass amplifier design, enabling the amplification of ultrashort pulses with excellent beam quality to more than 1 kW of average output power. 260 fs short pulses at an average power of 105 W and a repetition rate of 1 MHz were directly amplified up to an average power of 1033 W. The pulse duration at this power level was measured to be 388 fs assuming a Gaussian temporal shape. This corresponds to a peak power of 2.5 GW. The power stability was measured to be 0.16% RMS over a duration of more than two hours at a sampling rate of 2 Hz. High beam quality is proven with measured values of M x 2  = 1 .16 in the horizontal and M y 2  = 1 .19 in the vertical plane according to ISO Standard 11146.

Recent experiments on a soft X‐ray free‐electron laser (FEL) source (FLASH in Hamburg) have shown that multilayers (MLs) can be used as optical elements for highly intense X‐ray irradiation. An effort to find most appropriate MLs has to consider the femtosecond time structure and the particular photon energy of the FEL. In this paper we have analysed the time response of ‘low absorbing’ MLs (e.g. such as La/B4C) as a function of the number of periods. Interaction of a pulse train of Gaussian shaped sub‐pulses using a realistic ML grown by electron‐beam evaporation technique has been analysed in the soft‐X‐ray range. The structural parameters of the MLs were obtained by reflectivity measurements at BESSY II and subsequent profile fittings.

Gratings produced by two-spherical-beam Laser Interference Lithography (LIL) will have a nonuniform period, and the associated period variation is larger with the increase of the substrate size. This work quantitatively investigates a noninvasive method for improving the period variation on 4-inch silicon wafers. By temporarily deforming the flexible silicon wafer using a customized concave vacuum chuck [J. Vac. Sci. Technol. B 19(6), 2347 (2001)10.1116/1.1421558], we show that the fabricated gratings will have improved period uniformity, with the period variation reduced by 86% at the 1000 nm central grating period setting. This process is a simple and efficient way to achieve linear gratings without altering the LIL configuration with two spherical beams. We present experimental results on the impact of a concave vacuum chuck on the chirp reduction at different grating period settings. Then, we compare two different LIL configurations with different wavelength sources concerning their influence on the efficiency of period variation reduction. Finally, the flatness of the 4-inch silicon wafers due to the temporary bending process is verified using optical profilometry measurements.