Purpose The purpose of this paper is to provide the high-pass (HP) negative group delay (NGD) circuit based (RL) network. Synthesis and experimental investigation of HP-NGD circuit are developed. Design/methodology/approach The research work methodology is organized in three phases. The definition of the HP-NGD ideal specifications is introduced. The synthesis method allowing to determine the RL elements is developed. The validation results are discussed with comparison between the calculated model, simulation and measurement. Findings This paper shows a validation of the HP-NGD theory with responses confirming NGD optimal frequency, value and attenuation of about (9 kHz, −1.12 µs, −1.64 dB) and (21 kHz, −0.92 µs, −4.81 dB) are measured. The tested circuits have experimented NGD cut-off frequencies around 5 and 11.7 kHz. Research limitations/implications The validity of the HP-NGD topology depends on the coil self-inductance resonance. The HP-NGD effect is susceptible to be penalized by the parasitic elements of the self. Practical implications The NGD circuit is usefully exploited in the electronic and communication system to reduce the undesired delay effect context. The NGD can be used to compensate the delay in any electronic devices and system. Social implications Applications based on the NGD technology will be helpful in the communication, transportation and security research fields by reducing the delay inherent to any electronic circuit. Originality/value The originality of the paper concerns the synthesis formulations of the RL elements in function of the expected HP-NGD optimal frequency, value and attenuation. In addition, an original measurement technique of HP-NGD is also introduced.

The miniaturization and application development are the expected challenges on the today engineering design research on bandpass (BP) type negative group delay (NGD) circuit. To overcome this technical limit, an innovative contribution on integrated circuit (IC) design method of BP-NGD application to design constant phase shifter (PS) in 130-nm BiCMOS technology is developed in the present paper. The BP-NGD PS microwave passive IC is topologically consisted of cascade of CLC-and RLC-resonant networks. After the S-matrix modelling, the synthesis design equations enabling to calculate each lumped component values constituting the BP-NGD PS BiCMOS are established. The design equations are expressed knowing the targeted specifications as phase shift and operating frequency. The BiCMOS design methodology including the key steps as design rule checking (DRC), layout versus schematic (LVS) and post-layout simulation (PLS) is described. The miniaturized BP-NGD PS design feasibility is verified with schematic and layout simulations with IC CMOS standard commercial software tool. A proof-of-concept (POC) of 130-nm BiCMOS BP-NGD PS operating at the center frequency f0=1.9 GHz and bandwidth ∆f=0.1 GHz is designed and simulated. After DRC, the chip layout of miniaturized BP-NGD PS POC presents 0.407 mm² size. The BP-NGD PS POC exhibits constant phase shift notable value of about φ0=-90°+/-0.4° under S21(f0)=-6+/-1 dB transmission coefficient with good flatness and reflection coefficients (S21(f0) and S21(f0)) widely better than -10 dB. The design robustness is confirmed by 1000-trial Monte Carlo uncertainty analyses with PLS results. Because of the potential integration in wireless sensor networks (WSNs), the BP-NGD PS under study is a promising candidate for the improvement of the future 5G and 6G transceiver design.

Most of the recent studies on unfamiliar negative group delay (NGD) circuit were focused on the classes of low-pass (LP) and bandpass (BP) topologies. So far, few research works are currently available in the literature on the highpass (HP) NGD class. This paper introduces an original HP-NGD circuit theory of four-port passive topology constituted by a single lumped capacitor. The S-matrix equivalent model of the innovative topology is established from the admittance matrix. The basic analytical frequency-dependent responses are expressed. Then, the GD model is derived in function of the capacitor. It was analytically found that the four-port mono-capacitor passive circuit is susceptible to behave as an unfamiliar class of HP-NGD function. An innovative HP-NGD analysis is explored in addition to the expression of synthesis design equation in function of the expected NGD cut-off frequency which is linked to NGD optimal value. The validity of the established HP-NGD theory is verified with a proof of concept (POC) circuit. As expected, the POC enables HP-NGD behavior to show a good correlation between analytical model which is confirmed by the simulation.

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