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The performance of solar PV modules is significantly affected by temperature. This paper focuses on the determination of the effect of temperature on a commercial mono-crystalline silicon PV module whose temperature coefficients were not provided by the manufacturer for installation in Kumasi, Ghana, Sub-Saharan Africa (SSA) ambient. In order to determine the effect of temperature on the output characteristics of the module, the temperature coefficients of current, voltage and power were determined. First of all, the module was cooled to a temperature between 10˚C-15˚C in a cooling chamber, covered with cardboard paper before the outdoor electrical tests using Daystar I-V Curve tracer. The results show that as temperature increases, irradiance decreases significantly leading to a decrease in output power (P max). The open circuit voltage (V oc) also decreases, whilst short circuit current (I sc) increases slightly. The temperature coefficients were obtained from the slopes How to cite this paper: Takyi, G. and Nyarko, F.K. (2020) Investigation of the Effect of Temperature Coefficients on Mono-Crystalline Silicon PV Module In

Purpose A numerical study on the reliability of soldered interconnects of c-Si solar photovoltaic cells has been conducted. Design/methodology/approach A three-year data (2012–2014) from outdoor weathering of PV modules was used to generate temperature cycle profiles to serve as thermal loads and boundary conditions for the investigation of the thermo-mechanical response of the soldered interconnects when subjected to real outdoor conditions using finite element analysis (FEA) Software (Ansys. 18.2). Two types of soldered interconnections, namely, Sn60Pb40 and Sn3.8Ag0.7Cu (Pb-free), were modelled in this study. Findings Life prediction results from accumulated creep energy density damage show that the solder interconnects will achieve maximum life under the 2014 thermal cycle loading. In particular, the Sn60Pb40 solder interconnection is expected to achieve 14,153 cycles (25.85 years) whilst the Pb-free solder interconnection is expected to achieve 9,249 cycles (16.89 years). Additionally, under the test region average (TRA) thermal cycle, the Pb-free and Pb-Sn solder interconnections are expected to achieve 7,944 cycles (13.69 years) and 12,814 cycles (23.4 years), respectively. The study shows that Sn60Pb40 solder interconnections are likely to exhibit superior reliability over the Pb-free solder interconnections at the test site. Practical implications This study would be useful to electronics manufacturing industry in the search for a suitable alternative to SnPb solders and also the thermo-mechanical reliability research community and manufacturers in the design of robust PV modules. Originality/value The study has provided TRA data/results which could be used to represent the test region instead of a particular year. The study also indicates that more than six thermal cycles are required before any meaningful conclusions can be drawn. Finally, the life of the two types of solders (SnPb and Pb-free) as interconnecting materials for c-Si PV have been predicted for the test region (Kumasi in sub-Saharan Africa).

c-Si solar cell interconnection damages from thermal cycles emanate from cumulative damage contributions from the various load steps in a typical thermal cycle. In general, a typical thermal cycle involves five thermal load steps, namely: 1st cold dwell, ramp-up, hot dwell, ramp-down, and 2nd cold dwell. To predict the contributions of each of these load steps to creep damage in soldered interconnections, each of the respective load steps needs to be profiled to accurately fit a function capable of predicting the damage contributions from a given number of thermal cycles. In this study, a field thermal cycle profile generated from in situ thermal cyclings at a test site in Kumasi, a hot humid region of sub-Saharan Africa, is used to predict damage in solar cell interconnections from accumulated creep energy density using finite element analysis (FEA). The damage was assessed for two different solder formulations, namely: Pb60Sn40 and Sn3.8Ag0.7Cu (lead-free). The results from the FEA simulations show that the cooling (ramp-down) load steps accounted for the highest accumulated creep energy density (ACED) damage in solder interconnections. The ramp-up load steps followed this closely. The cumulative contributions of the two load steps accounted for 78% and 88% of the total damage per cycle in the Pb60Sn40 and Sn3.8Ag0.7Cu solder interconnections, respectively. Furthermore, a study of the damage profiles from each of the five load steps revealed that each of the damage functions from the various load steps is a step function involving the first two thermal cycles, on one hand, and the remaining 10 thermal cycles on the other hand. The damage from the first two thermal cycles can be predicted from a logarithmic function, whereas the damage from the remaining 10 thermal cycles is predicted using six-order polynomial functions. The ACED results computed from the damage functions are in close agreement with the results from the FEA simulation. The functions generated provide useful relations for the prediction of the life (number of cycles to failure) of solder interconnections in solar cells. The systematic approach used in this study can be repeated for other test sites to generate damage functions for the prediction of the life of c-Si PV cells with SnPb and lead-free solder interconnections.