Articles you may be interested inThe effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O3 thin films with bottom SrRuO3 electrode J. Appl. Phys. 112, 064116 (2012); 10.1063/1.4754318 Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt -ZnO -Pb ( Zr 0.2 Ti 0.8 ) O 3 -Pt heterostructures Appl. Phys. Lett. 96, 012903 (2010); 10.1063/1.3284659 Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation Growth, microstructure, and ferroelectric properties of Pb ( Zr 0.4 Ti 0.6 ) O 3 ∕ Pb Zr O 3 superlattices prepared on Sr Ti O 3 (100) substrates by pulsed laser depositionThe hysteretic properties of metal-ferroelectric-semiconductor (MFS) structures based on Pb(Zr 0.2 Ti 0.8 )O 3 (PZT) and ZnO films were studied with respect of the quality of the PZT-ZnO interface. The films were grown by pulsed laser deposition (PLD) on platinized silicon (Pt/Si) substrate and on single crystal, (001) oriented SrTiO 3 (STO) substrates. The structural analysis has revealed that the PZT-ZnO stack grown on single crystal STO is epitaxial, while the structure grown on Pt/Si has columnar texture. The temperature change of the capacitance-voltage (C-V) hysteresis direction, from clockwise at low temperatures to counter clockwise at high temperatures, was observed at around 300 K in the case of the MFS structure grown by PLD on Pt/Si substrate. This temperature is lower than the one reported for the case of the PZT-ZnO structure grown by sol-gel on Pt/Si substrate (Pintilie et al., Appl. Phys. Lett. 96, 012903 (2010)). In the fully epitaxial structures the C-V hysteresis is counter clockwise even at 100 K. These findings strongly points out that the quality of the PZT-ZnO interface is essential for having a C-V hysteresis of ferroelectric nature, with negligible influence from the part of the interface states and with a memory window of about 5 V at room temperature. V C 2012 American Institute of Physics. [http://dx.

The rectifying properties of Nb:SrTiO 3-Bi 1Àx Gd x FeO 3-Pt structures (x ¼ 0, 0.05, 0.1) displaying diode-like behavior were investigated via current-voltage characteristics at different temperatures. The potential barrier was estimated for negative polarity assuming a Schottky-like thermionic emission with injection controlled by the interface and the drift controlled by the bulk. The height of the potential barrier at the Nb:SrTiO 3-Bi 1Àx Gd x FeO 3 interface increases with Gd doping. The results are explained by the partial compensation of the p-type conduction due to Bi vacancies with Gd doping in addition to the shift of the Fermi level towards the middle of the bandgap with increasing dopant concentration. V

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