A novel variant of the ion layer gas reaction (ILGAR) process is described. Up to now, only layers with a maximum thickness of about 100 nm could be deposited by ILGAR in a reasonable time. Replacing of dipping by spraying on a warm substrate accelerated the application of the precursor solution (e.g., metal chloride in water) by a factor of at least 100. For multinary products, all precursors are applied either simultaneously as a mixed solution or sequentially. In intervals, the spraying is stopped and the reaction gas H 2 S is allowed to flow over the substrate. A special, yet simple setup is shown, which allows also a recycling of unconverted precursor. In about an hour time, a micrometer thick layer of mixed or stacked CuS/In 2 S 3 /(Ga 2 S 3 ) (from CuCl 2 , InCl 3 and in some cases GaCl 3 , respectively) is deposited. The latter is converted to CuInS 2 (CIS) or Cu(In,Ga)S 2 (CIGS) by annealing in H 2 S/Ar at 550 °C. The thermodynamically stable product distribution for this process is calculated. The influence of the process parameters, substrate temperature during precursor deposition, annealing temperature, CuCl 2 /InCl 3 ratio and gallium addition, is studied. The layers are used as absorbers in chalcopyrite thin film solar devices. The grain size necessary for this purpose is already sufficient (ca. 0.5-0.7 µm diameter). First solar cells based on spray-ILGAR-CIS and -CIGS have been prepared and compared. The efficiency has already reached 3.4%. An unusual layer morphology is obtained when the substrate temperature is too high (>90 °C). In this case, the layer consists of ideal hollow spheres with a hole in them. An explanation for this phenomenon is given.

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Atomic Vapor Deposition (AVD®) and MOCVD of TaCN-based films are studied for high work function needed for PMOS Gate-first designs. Work functions as high as 4.85eV and 4.92eV are achieved on HfSiON and HfSiO high k dielectrics, respectively. The film composition was varied from pure Ta2N to TaC films which improve the work function as well as thermal stability. The high work function was different depending on whether different underlying high k dielectrics and N compositions were used. The approaches for obtaining high work function and the impact of underlying high k films are discussed. After detailing the physical and chemical characteristics of MOCVD and AVD® TaCN films, this paper correlates the deposition technologies to the high work function values obtained by extraction from flatband voltage / equivalent oxide thickness (EOT) measurements.

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